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2SB1295_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors
SMD Type
PNP Transistors
2SB1295
Transistors
■ Features
● Large current capacity.
● Low collector to emitter saturation voltage.
● Complimentary to 2SD1935.
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 +0.1
-0.1
Unit: mm
0.1 +0.05
-0.01
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
Rating
Unit
VCBO
-15
VCEO
-15
V
VEBO
-5
IC
-0.8
A
ICP
-3
A
PC
200
mW
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA, IE=0
VCEO Ic= -1 mA, RBE=∞
VEBO IE= -100μA, IC=0
ICBO VCB= - 12V , IE=0
IEBO VEB= -4V , IC=0
IC=-5 mA, IB=-0.5mA
VCE(sat)
IC=-400 mA, IB=-20mA
VBE(sat) IC=-400 mA, IB=-20mA
VCE= -2V, IC= -50mA
hFE
VCE= -2V, IC= -800mA
Cob VCB= -10V, IE= 0,f=1MHz
fT
VCE= -2V, IE= 50mA
■ Classification of hfe(1)
Type
Range
Marking
2SB1295-UL5
135-270
UL5
2SB1295-UL6
200-400
UL6
2SB1295-UL7
300-600
UL7
Min Typ Max Unit
-15
-15
V
-5
-0.1
uA
-0.1
-10 -25
mV
-100 -200
-0.9 -1.2 V
135
600
80
15
pF
300
MHz
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