2SB1202_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
Transistors
PNP Transistors
2SB1202
■ Features
●Low collector-to-emitter saturation voltage.
● Fast switching speed.
● Large current capacity and wide ASO.
● Complementary to 2SD1802
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
0.80+0.1
-0.1
0.127
m ax
Unit: mm
■ Absolute Maximum Ratings Ta = 25℃
2.3
4 .60 ^+0.15
-0.15
0.60+ 0.1
- 0.1
1 Base
2 Collector
3 Emitter
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Tc = 25℃
Junction Temperature
Storage Temperature range
Symbol
Rating
Unit
VCBO
-60
VCEO
-50
V
VEBO
-6
IC
-3
A
ICP
-6
15
PC
W
1
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Turn-ON Time
Storage Time
Fall Time
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA, RBE=∞
VEBO IE= -100μA， IC=0
ICBO VCB= -50V , IE=0
IEBO VEB= -5V , IC=0
VCE(sat) IC=-2 A, IB=-100mA
VBE(sat) IC=-2 A, IB=-100mA
VCE= -2V, IC= -100 mA
hFE
VCE= -2V, IC= -3 A
ton
tstg
See specified Test Circuit
tf
Cob VCB= -10V, IE= 0,f=1MHz
fT
VCE= -10V, IC= -50mA
Min Typ Max Unit
-60
-50
V
-6
-1
uA
-1
-0.35 -0.7
V
-0.94 -1.2
100
560
35
70
450
ns
35
39
pF
150
MHz
■ Classification of hfe(1)
Type
2SB1202-R
Range
100-200
2SB1202-S
140-280
2SB1202-T
200-400
2SB1202-U
280-560
www.kexin.com.cn ¹