2SA1162_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
Transistors
PNP Transistors
2SA1162
■ Features
● High voltage and high current
● High hFE: hFE = 70~400
● Low noise: NF = 1dB (typ.), 10dB (max)
● Complementary to 2SC2712
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
Unit: mm
0.1 +0.05
-0.01
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
VCBO
-50
Collector - Emitter Voltage
VCEO
-50
V
Emitter - Base Voltage
VEBO
-5
Collector Current - Continuous
Base Current
IC
-150
mA
IB
-30
Collector Power Dissipation
PC
150
mW
Junction Temperature
Storage Temperature range
TJ
125
℃
Tstg
-55 to 125
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Noise figure
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA， IB=0
VEBO IE= -100μA， IC=0
ICBO VCB= -50 V , IE=0
IEBO VEB= -5V , IC=0
VCE(sat) IC=-100 mA, IB=-10mA
VBE(sat) IC=-100 mA, IB=-10mA
hFE VCE= -6V, IC= -2mA
Min Typ Max Unit
-50
-50
V
-5
-100
nA
-100
-0.3
V
-1.2
70
400
NF
VCE = −6 V, IC = −0.1 mA, f = 1 kHz,
Rg = 10 kΩ,
10 dB
Cob VCB= -10V, IE= 0,f=1MHz
fT
VCE= -10V, IC= -1mA
7 pF
80
MHz
■ Classification of hfe
Type
Range
Marking
2SA1162-O
70-140
SO
2SA1162-Y
120-240
SY
2SA1162-G
200-400
SG
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