2N3442 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS

2N3442
2N4347
HIGH POWER INDUSTRIAL TRANSISTORS
NPN silicon transistors designed for applications in industrial and commercial equipment including high
fidelity audio amplifiers, series and shunts regulators and power switches.
• Low Collector-Emitter Saturation Voltage –
V_CE(sat) = 1.0 Vdc (Max) @ I_C = 2.0 Adc – 2N4347
• Collector-Emitter Sustaining Voltage-
VCEO(sus) = 120 Vdc (Min) – 2N4347
140 Vdc (Min) – 2N3442
• Excellent Second-Breakdown Capability
ABSOLUTE MAXIMUM RATINGS
Symbol
V_CEO
V_CB
V_EB
I_C
I_B
P_D
T_J
T_S
Ratings
#Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Continuous
Peak
Base Current
Continuous
Peak
Total Device Dissipation
Junction Temperature
@ T_C = 25°
Derate
above 25°
Storage Temperature
2N4347
2N3442
2N4347
2N3442
2N4347
2N3442
2N4347
2N3442
2N4347
2N3442
2N4347
2N3442
2N4347
2N3442
2N4347
2N3442
2N4347
2N3442
2N4347
2N3442
2N4347
2N3442
(**) This data guaranteed in addition to JEDEC registered data.
Value
120
140
140
160
7.0
5.0
10
10
15 (**)
3.0
7.0
8.0
-
100
117
0.57
0.67
-65 to +200
Unit
V
Vdc
Vdc
Adc
Adc
Watts
W/°C
°C
°C
COMSET SEMICONDUCTORS
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