1N5819W Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – SURFACE MOUNT SCHOTTKY BARRIER DIODE

Certificate TH97/10561QM
Certificate TW00/17276EM
1N5819W
FEATURES :
* Low Power Loss,
* Low Forward Voltage Drop
* High Efficiency
* High Surge Capability
* High Current Capability
* Pb / RoHS Free
MECHANICAL DATA :
* Case: SOD-123, Plastic
* Terminals: Solderable per MIL-STD-202, Method 208
* Polarity: Cathode Band
* Weight: 0.01 grams (approx.)
Absolute Maximum Ratings (Ta = 25 °C)
Parameter
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage at I _R = 1 mA
Maximum DC Blocking Voltage
Maximum RMS Reverse Voltage
Maximum Average Forward Current
Non-Repetitive Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rated load (JEDEC Method)
Power Dissipation
Typical Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature Range
SURFACE MOUNT
SCHOTTKY BARRIER DIODE
SOD-123
2.7
2.6
3.9
37
Dimensions in millimeters
Symbol
V_RRM
V_RWM
V_R
V_R(RMS)
I_F
I_FSM
P_tot
R_Ó¨JA
T_J
T_STG
Value
40
40
40
28
1
25.0
450
222
125
-55 to + 125
Unit
V
V
V
V
A
A
mW
°C/W
°C
°C
Electrical Characteristics (Ta = 25 °C)
Parameter
Reverse Breakdown Voltage
Forward Voltage (Note 1)
Reverse Leakage Current
(Note 1)
Typical Junction Capacitance
Symbol
V_(BR)R
V_F
I_RM
C_J
Test Condition
I_R = 1.0 mA
I_F = 0.1 A
I_F = 1.0 A
I_F = 3.0 A
V_R = 40 V
V_R = 40 V, Ta = 100 °C
V_R = 4 V
V_R = 4 V, Ta = 100 °C
V_R = 6 V
V_R = 6 V, Ta = 100 °C
at VR = 4V, f = 1MHz
Note : (1) Pulse Test: Pulse width ≤200 μs, Duty Cycle ≤2%.
Page 1 of 1
Min.
40
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-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
10.0
1.0
15.0
1.5
110
Max.
Unit
-
V
0.32
0.45
V
0.75
1
mA
10.0
mA
50.0
μA
2.0
mA
75.0
μA
3.0
mA
-
pF
Rev. 00 : August 9, 2007