1N3671A Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – Silicon Standard Recovery Diode

Silicon Standard
Recovery Diode
Features
• High Surge Capability
• Types up to 1000 V V_RRM
1N3671A thru 1N3673AR
V_RRM = 50 V - 1000 V
I_F = 12 A
DO-4 Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
Operating temperature
Storage temperature
V_RRM
V_RMS
V_DC
I_F
I_F,SM
T_j
T_stg
T_C ≤ 150 °C
T_C = 25 °C, t_p = 8.3 ms
1N3671A (R)
800
560
800
12
240
-65 to 200
-65 to 200
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
Symbol
V_F
I_R
Thermal characteristics
Thermal resistance, junction -
case
R_thJC
Conditions
I_F = 12 A, T_j = 25 °C
V_R = 50 V, T_j = 25 °C
V_R = 50 V, T_j = 175 °C
1N3671A (R)
1.1
10
15
2.00
1N3673A (R)
Unit
1000
V
700
V
1000
V
12
A
240
A
-65 to 200
°C
-65 to 200
°C
1N3673A (R)
1.1
10
15
2.00
Unit
V
μA
mA
°C/W
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