1N1199A Datasheet, PDF (1/2 Pages) Diotec Semiconductor – Silicon-Power Rectifiers

Silicon Standard
Recovery Diode
Features
• High Surge Capability
• Types up to 1000 V V_RRM
1N1199A thru 1N1206AR
V_RRM = 50 V - 1000 V
I_F = 12 A
DO-4 Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
1N1199 (R) 1N1200 (R) 1N1202 (R) 1N1204 (R) 1N1206 (R) Unit
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
V_RRM
V_RMS
V_DC
I_F
T_C ≤ 150 °C
50
100
200
35
70
140
50
100
200
12
12
12
Surge non-repetitive forward
current, Half Sine Wave
I_F,SM T_C = 25 °C, t_p = 8.3 ms
240
240
240
400
600
V
280
420
V
400
600
V
12
12
A
240
240
A
Operating temperature
T_j
Storage temperature
T_stg
-65 to 200 -65 to 200 -65 to 200 -65 to 200 -65 to 200 °C
-65 to 200 -65 to 200 -65 to 200 -65 to 200 -65 to 200 °C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
Symbol
V_F
I_R
Thermal characteristics
Thermal resistance, junction -
case
R_thJC
Conditions
1N1199 (R) 1N1200 (R) 1N1202 (R) 1N1204 (R) 1N1206 (R) Unit
I_F = 12 A, T_j = 25 °C
1.1
1.1
1.1
V_R = 50 V, T_j = 25 °C
10
10
10
V_R = 50 V, T_j = 175 °C
15
15
15
1.1
1.1
V
10
10
μA
15
15
mA
2.00
2.00
2.00
2.00
2.00 °C/W
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