UC62LS4008 Datasheet, PDF (7/11 Pages) List of Unclassifed Manufacturers – Low Power CMOS SRAM 512K X 8 Bits

Low Power CMOS SRAM
512K X 8 Bits
WRITE CYCLE2^(1,6)
ADDRESS
CE
t_AS
WE
D_OUT
t_WC
t_{AW tCW(11)}
t_WHZ
t_WP(2)
D_IN
UC62LS4008
-20/-25
t_OH
(7) (8)
t_DW
t_DH
NOTES:
1. WE\ must be high during address transitions.
2. The internal write time of the memory is defined by the overlap of CE\ and WE\ low. All signals
must be active to initiate a write and any one can terminate a write by going inactive. The data
input setup and hold timing should be referenced to the second transition edge of the signal that
terminates the write.
3. T_WR is measured from the earlier of CE\ or WE\ going high at the end of write cycle.
4. During this period, DQ pins are in the output state so that the input signals of opposite phase to
the outputs must not be applied.
5. If the CE\ low transition occurs simultaneously with the WE\ low transitions or after the WE\
transition, output remain in a high impedance state.
6. OE\ is continuously low (OE\ = V_IL).
7. D_OUT is the same phase of write data of this write cycle.
8. D_OUT is the read data of next address.
9. If CE\ is low during this period, DQ pins are in the output state. Then the data input signals of
opposite phase to the outputs must not be applied to them.
10. Transition is measured 500mV from steady state with C_L = 5pF as shown in Figure 1B. The
parameter is guaranteed but not 100% tested.
11. TCW is measured from the later of CE\ going low to the end of write.
U-Chip Technology Corp. LTD. .
Reserves the right to modify document contents without notice.
Preliminary Rev.1.0
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