U635H16 Datasheet, PDF (7/14 Pages) List of Unclassifed Manufacturers – PowerStore 2K x 8 nvSRAM

Nonvolatile Memory Operations
Mode Selection
U635H16
E
W
A10 - A0
(hex)
Mode
I/O
H
X
X
Not Selected
Output High Z
L
H
X
Read SRAM
Output Data
L
L
X
Write SRAM
Input Data
L
H
000
Read SRAM
Output Data
555
Read SRAM
Output Data
2AA
Read SRAM
Output Data
7FF
Read SRAM
Output Data
0F0
Read SRAM
Output Data
70F
Nonvolatile STORE
Output High Z
L
H
000
Read SRAM
Output Data
555
Read SRAM
Output Data
2AA
Read SRAM
Output Data
7FF
Read SRAM
Output Data
0F0
Read SRAM
Output Data
70E
Nonvolatile RECALL
Output High Z
Power
Standby
Active
Active
Active
Active
Notes
m
k, l
k, l
k, l
k, l
k, l
k
k, l
k, l
k, l
k, l
k, l
k
k: The six consecutive addresses must be in order listed (000, 555, 2AA, 7FF, 0F0, 70F) for a Store cycle or (000, 555, 2AA, 7FF,0F0, 70E) for
a RECALL cycle. W must be high during all six consecutive cycles.
See STORE cycle and RECALL cycle tables and diagrams for further details.
The following six-address sequence is used for testing purposes and should not be used: 000, 555, 2AA, 7FF, 0F0, 39C.
l: Activation of nonvolatile cycles does not depend on the state of G.
m: I/O state assumes that G ≤ V_IL.
No.
PowerStore
Power Up RECALL
24 Power Up RECALL Duration^{n, e}
Symbol
Alt.
IEC
t_RESTORE
25 STORE Cycle Duration^f
t_PDSTORE
26 time allowed to Complete SRAM Cycle^{f, e} t_DELAY
Low Voltage Trigger Level
V_SWITCH
Conditions
Min.
the power supply vol-
tage must stay above
3.6 V at least
10 ms after the start
of the STORE opera-
tion
1
4.0
Max.
650
10
4.5
Unit
μs
ms
μs
V
n: t_RESTORE starts from the time V_CC rises above V_SWITCH.
March 31, 2006
STK Control #ML0050
7
Rev 1.0