U630H64 Datasheet, PDF (4/14 Pages) List of Unclassifed Manufacturers – HardStore 8K x 8 nvSRAM

U630H64
DC Characteristics
Output High Voltage
Output Low Voltage
Output High Current
Output Low Current
Input Leakage Current
Output Leakage Current
High
Low
High at Three-State- Output
Low at Three-State- Output
Symbol
Conditions
V_OH
V_OL
I_OH
I_OL
I_IH
I_IL
I_OHZ
I_OLZ
V_CC
I_OH
I_OL
V_CC
V_OH
V_OL
V_CC
V_IH
V_IL
V_CC
V_OH
V_OL
= 4.5 V
=-4 mA
= 8 mA
= 4.5 V
= 2.4 V
= 0.4 V
= 5.5 V
= 5.5 V
= 0V
= 5.5 V
= 5.5 V
= 0V
C-Type
K-Type
Unit
Min. Max. Min. Max.
2.4
2.4
V
0.4
0.4 V
-4
-4 mA
8
8
mA
1
1 µA
-1
-1
µA
1
1 µA
-1
-1
µA
SRAM Memory Operations
No.
Switching Characteristics
Read Cycle
1 Read Cycle Time^f
2 Address Access Time to Data Valid^g
3 Chip Enable Access Time to Data Valid
4 Output Enable Access Time to Data Valid
5 E HIGH to Output in High-Z^h
6 G HIGH to Output in High-Z^h
7 E LOW to Output in Low-Z
8 G LOW to Output in Low-Z
9 Output Hold Time after Addr. Change^g
10 Chip Enable to Power Active^e
11 Chip Disable to Power Standby^{d, e}
Symbol
Alt.
t_AVAV
t_AVQV
t_ELQV
t_GLQV
t_EHQZ
t_GHQZ
t_ELQX
t_GLQX
t_AXQX
t_ELICCH
t_EHICCL
IEC
t_cR
t_a(A)
t_a(E)
t_a(G)
t_dis(E)
t_dis(G)
t_en(E)
t_en(G)
t_v(A)
t_PU
t_PD
e: Parameter guaranteed but not tested.
f: Device is continuously selected with E and G both LOW.
g: Address valid prior to or coincident with E transition LOW.
h: Measured ± 200 mV from steady state output voltage.
25
35
45
Unit
Min. Max. Min. Max. Min. Max.
25
35
45
ns
25
35
45 ns
25
35
45 ns
12
20
25 ns
13
17
20 ns
13
17
20 ns
5
5
5
ns
0
0
0
ns
3
3
3
ns
0
0
0
ns
25
35
45 ns
4
April 7, 2005