THAT300 Datasheet, PDF (4/5 Pages) List of Unclassifed Manufacturers – Low-Noise Matched Transistor Array ICs

Page 4
THAT300 Series Transistor Arrays
SPECIFICATIONS¹ (Cont’d)
PNP Electrical Characteristics²
Parameter
Symbol
Conditions
Min
PNP Current Gain
PNP Current Gain Matching
PNP Noise Voltage Density
h_fe
V_CB = 10 V
I_C = 1 mA
50
I_C = 10 mA
Dh_fe
V_CB = 10 V, I_C = 1 mA
—
e_N V_CB = 10 V, I_C = 1 mA, 1 kHz
—
PNP Gain-Bandwidth Product
f_T
I_C = 1 mA, V_CB = 10 V
PNP DV_BE (THAT320: V_BE1-V_BE2; V_BE3-V_BE4) (THAT340: V_BE3-V_BE4)
V_OS
I_C = 1 mA
—
I_C = 10 mA
—
PNP DI_B (THAT320: I_B1-I_B2; I_B3-I_B4) (THAT340: I_B3-I_B4)
I_OS
I_C = 1 mA
—
I_C = 10 mA
—
PNP Collector-Base
Leakage Current
I_CBO
V_CB = 25 V
—
PNP Bulk Resistance
r_BE V_CB = 0 V, 10mA < I_C< 10 mA
—
PNP Base Spreading Resistance r_bb
V_CB = 10 V, I_C = 1 mA
—
PNP Collector Saturation Voltage V_CE(SAT)
I_C = 1 mA, I_B = 100 mA
—
PNP Output Capacitance
C_OB V_CB = 10 V, I_E = 0 mA, 100 kHz
PNP Collector-Collector Capacitance (THAT320: Q1-Q2; Q3-Q4) (THAT340: Q3-Q4)
C_CC
V_CC = 0 V, 100 kHz
Typ
75
75
5
0.75
325
±0.5
±0.5
±700
±7
–25
2
25
–0.05
3
0.6
Max
—
—
—
—
±3
±1800
—
—
—
Units
%
nV Hz
MHz
mV
mV
nA
nA
pA
W
W
V
pF
pF
Information furnished by THAT Corporation is believed to be accurate and reliable. However no responsibility is as-
sumed by THAT Corporation for it’s use nor for any infringements of patents or other rights of third parties which may
result from it’s use.
LIFE SUPPORT POLICY
THAT Corporation products are not designed for use in life support equipment where malfunction of such products
can reasonably be expected to result in personal injury or death. The buyer uses or sells such products for life suport
application at the buyer’s own risk and agrees to hold harmless THAT Corporation from all damages, claims, suits or
expense resulting from such use.
CAUTION: THIS IS AN ESD (ELECTROSTATIC DISCHARGE) SENSITIVE DEVICE.
It can be damaged by the currents generated by electrostatic discharge. Static charge and therefore dangerous volt-
ages can accumulate and discharge without detection causing a loss of function or performance to occur.
The transistors in this device are unprotected in order to maximize performance and flexibility. They are more sen-
sitive to ESD damage than many other ICs which include protection devices at their inputs. Note that all of the pins
(not just the "inputs") are susceptible.
Use ESD preventative measures when storing and handling this device. Unused devices should be stored in conduc-
tive packaging. Packaging should be discharged to the destination socket before the devices are removed. ESD damage
can occur to these devices even after they are installed in a board-level assembly. Circuits should include specific and
appropriate ESD protection.
THAT Corporation; 45 Sumner Street; Milford, Massachusetts 01757-1656; USA
Tel: [phone]; Fax: [phone]; Web: www.thatcorp.com