BM29F400T Datasheet, PDF (32/38 Pages) List of Unclassifed Manufacturers – 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY

BRIGHT
Microelectronics
Inc.
Preliminary BM29F400T/BM29F400B
AC CHARACTERISTICS
Programming/Erase Operations
PARAMETER
SYM.
JEDEC
tAVAV
tAVEL
tELAX
tDVEH
tEHDX
Standard
tWC
tAS
tAH
tDS
tDH
tOES
tOEH
tGHWL
tWLEL
tEHWH
tELEH
tEHEL
tWHWH1
tGHWL
tWS
tWH
tCP
tCPH
tWHWH1
DESCRIPTION
Write Cycle Time(1)
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Output Enable Setup Time(1)
Output Enable
Read(1)
Hold Time
Toggle and Data Polling(1)
Read Recover Time Before Write
WE Setup Time
WE Hold Time
CE Pulse Width
CE Pulse Width High
Byte Programming Operation
tWHWH2
tWHWH2 Sector Erase Operation(2)
tWHWH3
tWHWH3 Chip Erase Operation(2)
tVCS
tVIDR
tVLHT
tWPP1
tWPP2
tOESP
Vcc Setup Time(1,3)
Rise Time to VID^(1,3)
Voltage Transition Time(1,3)
Sector Protect Write Pulse Width(4)
Sector Unprotect Write Pulse Width(4)
OE Setup Time to WE Active(1, ³⁾
tCSP
OE Setup Time to WE Active(1, ⁴⁾
Notes:
1. Not 100% tested.
2. Does not include pre-programming time.
3. This timing is for Sector Unprotect operation.
4. Output Driver Disable Time.
-90 -120 -150 Unit
Min. 90 120 150 nS
Min. 0
0
0
nS
Min. 45 50 50 nS
Min. 45 50 50 nS
Min. 0
0
0
nS
Min. 0
0
0
nS
Min. 0
0
0
nS
Min. 10 10 10 nS
Min. 0
0
0
nS
Min. 0
0
0
nS
Min. 0
0
0
nS
Min. 45 50 50 nS
Min. 20 20 20 nS
Typ. 16 16 16 mS
Max. 400 400 400 mS
Typ. 0.26 0.26 0.26 sec
Max. 12 12 12 sec
Typ. 2.0 2.0 2.0 sec
Max. 90 90 90 sec
Min. 50 50 50 mS
Min. 500 500 500 nS
Min. 4
4
4 mS
Min. 100 100 100 mS
Min. 10 10 10 mS
Min. 4
4
4 mS
Min. 4
4
4
nS
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