P4C168 Datasheet, PDF (3/8 Pages) List of Unclassifed Manufacturers – ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS

P4C168, P4C169, P4C170
AC CHARACTERISTICS—READ CYCLE
(V_CC = 5V ± 10%, All Temperature Ranges)⁽²⁾
Sym.
Parameter
t_RC Read Cycle Time
t_AA Address Access Time
t_AC§ Chip Enable Access Time
t_AC‡ Chip Select Access Time
t_OH Output Hold from Address Change
t_LZ‡ Chip Enable to Output in Low Z
t ^† Chip Disable to Output in High Z
HZ
t ^† Output Enable to Data Valid
OE
t^†
OLZ
Output Enable to Output in Low Z
t^†
OHZ
Output Disable to Output in High Z
t_RCS Read Command Setup Time
t_RCH Read Command Hold Time
t_PU§ Chip Enable to Power Up Time
t_PD§ Chip Disable to Power Down Time
§ P4C168 only
† P4C170 only
‡ Chip Select/Deselect for P4C169 and P4C170
–12
–15
–20
–25
–35
Unit
Min Max Min Max Min Max Min Max Min Max
12
15
20
25
35
ns
12
15
20
25
35 ns
12
15
20
25
35 ns
8
9
12
15
20 ns
2
2
2
2
2
ns
2
2
2
2
2
ns
6
7
9
10
15 ns
8
10
12
15
15 ns
0
0
0
0
0
ns
6
7
9
11
15 ns
0
0
0
0
0
ns
0
0
0
0
0
ns
0
0
0
0
0
ns
12
15
20
25
35 ns
TIMING WAVEFORM OF READ CYCLE NO. 1 (ADDRESS CONTROLLED)^(5,6)
ADDRESS
DATA OUT
t _AA
t _OH
PREVIOUS DATA VALID
(9)
t _RC
DATA VALID
Notes:
5. WE is HIGH for READ cycle.
6. CE/CS and OE are LOW for READ cycle.
35