GS71116TP Datasheet, PDF (3/15 Pages) List of Unclassifed Manufacturers – 1Mb Asynchronous SRAM

GS71116TP/J/U
Truth Table
CE
OE WE
LB
UB
H
X
X
X
X
L
L
L
L
H
L
H
H
L
L
L
L
X
L
L
H
H
L
L
H
H
X
X
L
X
X
H
H
Note: X: “H” or “L”
DQ1 to DQ8
Not Selected
Read
Read
High Z
Write
Write
Not Write, High Z
High Z
High Z
DQ9 to DQ16
Not Selected
Read
High Z
Read
Write
Not Write, High Z
Write
High Z
High Z
VDD Current
ISB1, ISB2
IDD
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Supply Voltage
VDD
Input Voltage
VIN
Output Voltage
VOUT
Allowable power dissipation
PD
Storage temperature
TSTG
-0.5 to +4.6
V
-0.5 to VDD+0.5
(≤ 4.6V max.)
V
-0.5 to VDD+0.5
(≤ 4.6V max.)
V
0.7
W
-55 to 150
o_C
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended
Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.
Rev: 1.06 6/2000
3/15
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 1999, Giga Semiconductor, Inc.