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FP10R06KL4 Datasheet, PDF (3/12 Pages) List of Unclassifed Manufacturers – Elektrische Eigenschaften / Electrical properties
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Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FP10R06KL4
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Modulinduktivität
stray inductance module
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip
TC = 25°C
Vorläufig
Preliminary
min. typ. max.
LsCE
-
-
40
nH
RCC'+EE'
-
14
-
mW
Diode Wechselrichter/ Diode Inverter
Durchlaßspannung
forward voltage
Rückstromspitze
peak reverse recovery current
Sperrverzögerungsladung
recovered charge
Abschaltenergie pro Puls
reverse recovery energy
VGE = 0V, Tvj = 25°C, IF =
VGE = 0V, Tvj = 125°C, IF =
IF=INenn,
- diF/dt =
VGE = -10V, Tvj = 25°C, VR =
VGE = -10V, Tvj = 125°C, VR =
IF=INenn,
- diF/dt =
VGE = -10V, Tvj = 25°C, VR =
VGE = -10V, Tvj = 125°C, VR =
IF=INenn,
- diF/dt =
VGE = -10V, Tvj = 25°C, VR =
VGE = -10V, Tvj = 125°C, VR =
10 A
10 A
600 A/us
300 V
300 V
600 A/us
300 V
300 V
600 A/us
300 V
300 V
Transistor Brems-Chopper/ Transistor Brake-Chopper
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
VGE = 15V, Tvj = 25°C, IC = 10,0 A
VGE = 15V, Tvj = 125°C, IC = 10,0 A
Gate-Schwellenspannung
gate threshold voltage
VCE = VGE, Tvj = 25°C, IC = 0,35mA
Eingangskapazität
input capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
f = 1MHz, Tvj = 25°C
VCE = 25 V, VGE = 0 V
VGE = 0V, Tvj = 125°C, VCE = 600V
Gate-Emitter Reststrom
gate-emitter leakage current
VCE = 0V, VGE = 20V, Tvj = 25°C
min. typ. max.
VF
-
1,85 2,25
V
-
1,9
-
V
IRM
-
11
-
A
-
12
-
A
Qr
-
0,35
-
µAs
-
0,71
-
µAs
Erec
VCE sat
-
-
min.
-
-
0,05
0,12
typ.
1,95
2,2
-
-
max.
2,55
-
mWs
mWs
V
V
VGE(TO) 4,5
5,5
6,5
V
Cies
-
0,8
-
nF
-
5,0
-
mA
IGES
-
-
400 nA
Diode Brems-Chopper/ Diode Brake-Chopper
Durchlaßspannung
forward voltage
Tvj = 25°C,
Tvj = 125°C,
I F = 10,0 A
I F = 10,0 A
min. typ. max.
VF
-
1,85 2,25
V
-
1,9
-
V
NTC-Widerstand/ NTC-Thermistor
Nennwiderstand
rated resistance
Abweichung von R100
deviation of R100
Verlustleistung
power dissipation
B-Wert
B-value
TC = 25°C
TC = 100°C, R100 = 493 W
TC = 25°C
R2 = R1 exp [B(1/T2 - 1/T1)]
min. typ. max.
R25
-
5
-
kW
DR/R -5
5
%
P25
20 mW
B25/50
3375
K
3(12)
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