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CHT3946UPNPT Datasheet, PDF (3/5 Pages) List of Unclassifed Manufacturers – SURFACE MOUNT Complementary Small Signal Transistor (VOLTAGE 40 Volts CURRENT 0.2 Ampere)
RATING CHARACTERISTIC CURVES ( CHT3946UPNPT )
CH3906 THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
CH3906 CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
CONDITIONS
MIN.
ICBO
IEBO
hFE
VCEsat
VBEsat
Cc
Ce
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
IE = 0; VCB = - 30 V
IC = 0; VEB = 6 V
VCE = -1V; note 1
IC = -0.1mA
IC = -1mA
IC = -10 mA
IC = - 50 mA
IC = -100 mA
IC = -10 mA; IB = - 1 mA
IC = -50 mA; IB = - 5 mA
IC = -10 mA; IB = -1mA
IC = -50 mA; IB = - 5 mA
IE = ie = 0; VCB = - 5 V ; f = 1 MHz
IC = ic = 0; VEB = -500 mV;
f = 1 MHz
−
−
60
80
100
60
30
−
−
-650
−
−
−
fT
transition frequency
IC = 10 mA; VCE = - 2 0 V ;
250
f = 100 MHz
F
noise Þgure
IC = 100 µA; VCE = - 5 V; RS = 1 k Ω ; −
f = 10 Hz to 15.7 kHz
Switching times (between 10% and 90% levels);
ton
turn-on time
td
delay time
tr
rise time
toff
turn-off time
ts
storage time
tf
fall time
ICon = -10 mA; IBon = -1 mA;
−
IBoff = 1 mA
−
−
−
−
−
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
MAX.
-50
-50
UNIT
nA
nA
−
−
300
−
−
-250
-400
-850
-950
4.5
10
−
4
mV
mV
mV
mV
pF
pF
MHz
dB
65
ns
35
ns
35
ns
300
ns
225
ns
75
ns