AO4609 Datasheet, PDF (3/12 Pages) List of Unclassifed Manufacturers – Complementary Enhancement Mode Field Effect Transistor

AO4609
P-Channel Electrical Characteristics (T_J=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
STATIC PARAMETERS
BV_DSS Drain-Source Breakdown Voltage
I_D=-250µA, V_GS=0V
-30
I_DSS
Zero Gate Voltage Drain Current
V_DS=-24V, V_GS=0V
T_J=55°C
I_GSS
Gate-Body leakage current
V_DS=0V, V_GS=±12V
V_GS(th) Gate Threshold Voltage
V_DS=V_GS I_D=-250µA
-0.6
I_D(ON)
On state drain current
V_GS=-4.5V, V_DS=-5V
-10
V_GS=-10V, I_D=-3A
R_DS(ON) Static Drain-Source On-Resistance
V_GS=-4.5V, I_D=-2A
T_J=125°C
V_GS=-2.5V, I_D=-1A
g_FS
Forward Transconductance
V_DS=-5V, I_D=-3A
3
V_SD
Diode Forward Voltage
I_S=-1A,V_GS=0V
I_S
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
R_g
Gate resistance
V_GS=0V, V_DS=-15V, f=1MHz
V_GS=0V, V_DS=0V, f=1MHz
SWITCHING PARAMETERS
Q_g
Q_gs
Q_gd
t_D(on)
t_r
t_D(off)
t_f
t_rr
Q_rr
Total Gate Charge
Gate Source Charge
V_GS=-4.5V, V_DS=-15V, I_D=-3A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
V_GS=-10V, V_DS=-15V, R_L=5Ω,
R_GEN=3Ω
Turn-Off Fall Time
Body Diode Reverse Recovery Time ^IF^{=-3A, dI/dt=100A/µs}
Body Diode Reverse Recovery Charge ^IF^{=-3A, dI/dt=100A/µs}
Typ Max Units
V
-1
µA
-5
±100 nA
-1 -1.4 V
A
102 130
mΩ
154 200
128 180 ^mΩ
187 260 ^mΩ
4.5
S
-0.85 -1
V
-2
A
409
pF
55
pF
42
pF
12
Ω
4.4
nC
0.8
nC
1.32
nC
5.3
ns
4.4
ns
31.5
ns
8
ns
15.8
ns
8
nC
A: The value of R_θJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with T_A =25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R _θJA is the sum of the thermal impedence from junction to lead R_θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in² FR-4 board with 2oz. Copper, in a still air environment with T_A=25°C. The
SOA curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.