XP133A1235SR Datasheet, PDF (2/4 Pages) List of Unclassifed Manufacturers – Power MOS FET

91"43
1PXFS
.04
'&5
˙Electrical Characteristics
DC characteristics
PARAMETER
Drain Cut-off Current
Gate-Source Leakage Current
Gate-Source Cut-off Voltage
Drain-Source On-state Resistance
( note )
Forward Transfer Admittance
( note )
Body Drain Diode
Forward Voltage
SYMBOL
Idss
Igss
Vgs (off )
Rds ( on )
| Yfs |
Vf
( note ) : Effective during pulse test.
CONDITIONS
Vds = 20 , Vgs = 0V
Vgs = ± 12 , Vds = 0V
Id = 1mA , Vds = 10V
Id = 3A , Vgs = 4.5V
Id = 3A , Vgs = 2.5V
Id = 4A , Vds = 10V
If = 7A , Vgs = 0V
Ta=25° C
MIN
TYP MAX UNITS
10
µA
±1
µA
0.5
1.2
V
0.026 0.035
Ω
0.035 0.048
Ω
14
S
0.85
1.1
V
Dynamic characteristics
PARAMETER
SYMBOL
Input Capacitance
u
Output Capacitance
Ciss
Coss
Feedback Capacitance
Crss
CONDITIONS
Vds = 10V , Vgs = 0V
f = 1 MHz
Ta=25° C
MIN
TYP MAX UNITS
760
pF
430
pF
200
pF
Switching characteristics
PARAMETER
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
SYMBOL
td ( on )
tr
td ( off )
tf
CONDITIONS
Vgs = 5V , Id = 3A
Vdd = 10V
Ta=25° C
MIN
TYP MAX UNITS
10
ns
20
ns
55
ns
15
ns
Thermal characteristics
PARAMETER
Thermal Resistance
( channel - surroundings )
SYMBOL
Rth ( ch - a )
CONDITIONS
Implement on a glass epoxy
resin PCB
MIN
TYP MAX UNITS
62.5
°C / W