THAT120 Datasheet, PDF (2/2 Pages) List of Unclassifed Manufacturers – Quad Low-Noise PNP Transistor Array

Rev. 11/27/00
SPECIFICATIONS¹
Maximum Ratings (T_A = 25°C)
Parameter
Collector-Emitter Voltage
Symbol
BV_CEO
Conditions
I_C = 1 mAdc, I_B = 0
Min
Typ
Max
Units
-25
-40
¾
V
Collector-Base Voltage
BV_CBO
I_C = 10 mAdc, I_E = 0
-25
40
¾
V
Emitter-Base Voltage
BV_EBO
I_E = 10 mAdc, I_C = 0
-5
¾
¾
V
Collector-Collector Voltage
BV_CC
±100
±200
¾
V
Emitter-Emitter Voltage
BV_EE
±100
±200
¾
V
Collector Current
I_C
-10
-20
mA
Emitter Current
I_E
-10
-20
mA
Operating Temperature Range
T_A
0
70
°C
Maximum Junction Temperature T_JMAX
150
°C
Storage Temperature
T_STORE
-45
125
°C
Electrical Characteristics²
Parameter
Current Gain
Symbol
Conditions
Min
h_fe
V_CB = 10 V
I_C = 1 mA
50
I_C = 10 mA
50
Current Gain Matching
Dh_fe
V_CB = 10 V, I_C = 1 mA
—
Noise Voltage Density
e_N
V_CB = 10 V, I_C = 1 mA, 1 kHz
—
Gain-Bandwidth Product
f_t
I_C = 1 mA, V_CB = 10 V
DV_BE (V_BE1-V_BE2; V_BE3-V_BE4)
V_OS
I_C = 1 mA
—
I_C = 10 mA
—
DI_B (I_B1-I_B2; I_B3-I_B4)
I_OS
I_C = 1 mA
—
I_C = 10 mA
—
Collector-Base Leakage Current I_CBO
V_CB = 25 V
—
Bulk Resistance
r_BE
V_CB = 0 V, 10mA < I_C < 10mA
—
Base Spreading Resistance
r_bb
V_CB = 10 V, I_C = 1mA
—
Collector Saturation Voltage
V_CE(SAT)
I_C = 1 mA, I_B = 100 mA
—
Output Capacitance
C_OB V_CB = 10 V, I_E = 0 mA, 100 kHz
Collector-Collector Capacitance
Q₁/Q₂; Q₃/Q₄
C_CC
V_CC = 0 V, 100 kHz
Typ
75
75
5
0.75
325
±0.5
±0.5
±700
±7
-25
2
25
-0.05
3
0.6
Max
Units
¾
¾
—
—
±3
±3
±1800
±18
—
—
—
%
nV / Hz
MHz
mV
mV
nA
nA
pA
W
W
V
pF
pF
1. All specifications subject to change without notice.
2. Unless otherwise noted, T_A=25°C.
THAT Corporation; 45 Sumner St., Milford, Massachusetts; 01757-1656; USA
Tel: [phone]; Fax: [phone]; Web: www.thatcorp.com