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| SW630 Datasheet, PDF (2/6 Pages) List of Unclassifed Manufacturers – N-Channel MOSFET | |||
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SAMWIN
SW630
Electrical Characteristics (Tc=25â unless otherwise noted)
Symbol
Parameter
Test Conditions
Value
Unit
Min Typ Max s
Off Characteristics
BVDSS
â³BVDSS/â³Tj
Drain- Source Breakdown Voltage
Breakdown Voltage Temperature
coefficient
IDSS
Drain-Source Leakage Current
Gate-Source Leakage Current
IGSS
Gate-Source Leakage Reverse
On Characteristics
VGS=0V,ID=250uA
ID=250uA,referenced to
25â
VDS=200V, VGS=0V
VDS=160V, Tc=125â
VGS=30V,VDS=0V
VGS=-30V, VDS=0V
200
-
-
V
-
0.17
-
V/â
-
-
1
uA
-
-
100
nA
-
-
-100
nA
VGS(th)
RDS(ON)
Gate Threshold Voltage
Static Drain-Source On-state
Resistance
VDS=VGS,ID=250uA
VGS=10V,ID=4.5A
2.0
-
4.0
V
-
-
0.4
ohm
Dynamic Characteristics
Ciss
Input Capacitance
-
-
770
Coss
Crss
Output Capacitance
VGS=0V,VDS=25V f=1MHz
-
Reverse Transfer Capacitance
-
-
120
pF
-
35
Dynamic Characteristics
td(on)
Turn-on Delay Time
-
tr
Rise Time
td(off)
Turn-off Delay Time
tf
Fall Time
VDD=100V,ID=9A
-
RG=50ohm
-
(Note4,5)
-
Qg
Total Gate Charge
-
Qgs
Gate-Source Charge
VDS=160V,VGS=10V, ID=9A
-
Qgd
Gate-Drain Charge(Miller Charge)
(Note4,5)
-
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter
Test Conditions
Min.
-
-
-
-
-
4
10
Typ.
40
140
150
140
34
-
-
Max.
ns
nc
Unit.
IS
Continuous Source Current
ISM
Pulsed Source Current
Integral Reverse
p-n Junction Diode
in the MOSFET
G
VSD
Diode Forward Voltage
IS=9A,VGS=0V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IS=9A,VGS=0V,
dIF/dt=100A/us
NOTES
1. Repeativity rating: pulse width limited by junction temperature
2. L=6.3mH,IAS=9A,VDD=50V,RG=0ohm, Starting TJ=25â
3. ISDâ¤9A,di/dtâ¤100A/us,VDDâ¤BVDSS, Starting TJ=25â
4. Pulse Test: Pulse Widthâ¤300us,Duty Cycleâ¤2%
5. Essentially independent of operating temperature.
2/6
D
s
S
-
-
9
A
-
-
36
-
-
1.5
V
-
140
-
ns
-
0.77
-
uc
REV0.1
04.10.1
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