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| SSM4410M Datasheet, PDF (2/6 Pages) List of Unclassifed Manufacturers – N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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SSM4410M
Electrical Characteristics @ Tj=25oC (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
â BV DSS/â Tj
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
30 -
-
- 0.037 -
V
V/°C
RDS(ON)
Static Drain-Source On-Resistance VGS=10V, ID=10A
-
- 13.5 mâ¦
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=55oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=4.5V, ID=5A
VDS=VGS, ID=250uA
VDS=15V, ID=10A
VDS=30V, VGS=0V
VDS=24V, VGS=0V
VGS= ± 20V
ID=10A
VDS=15V
VGS=5V
VDS=25V
ID=1A
RG=3.3⦠, VGS=5V
RD=25â¦
VGS=0V
VDS=15V
f=1.0MHz
-
- 22 mâ¦
1
-
3
V
- 20 -
S
-
-
1 uA
-
- 25 uA
-
- ±100 nA
- 16.6 - nC
- 2.7 - nC
- 10.6 - nC
- 9.6 - ns
- 12.4 - ns
- 25.4 - ns
- 33 - ns
- 745 - pF
- 510 - pF
- 210 - pF
Source-Drain Diode
Symbol
Parameter
IS
Continuous Source Current ( Body Diode )
ISM
Pulsed Source Current ( Body Diode )1
VSD
Forward On Voltage2
Test Conditions
VD=VG=0V , VS=1.3V
Tj=25°C, IS=2.3A, VGS=0V
Min. Typ. Max. Units
-
- 2.3 A
-
- 50 A
-
- 1.3 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on FR4 board, t<10 sec.
Rev.2.02 12/29/2003
www.SiliconStandard.com
2 of 6
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