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SLD2083CZ Datasheet, PDF (2/5 Pages) List of Unclassifed Manufacturers – 10 Watt high performance LDMOS transistor designed for operation to 2700MHz
Preliminary
SLD2083CZ 10 Watt LDMOS FET
DC Specifications
Parameter
gm
VGSThreshold
VDS Breakdown
Ciss
Crss
Coss
RDSon
Unit
Min
Typical
Max
Forward Transconductance @ 125mA IDQ
IDS=3mA
1mA IDS current
Input Capacitance (Gate to Source) VGS=0V, VDS=28V
Reverse Capacitance (Gate to Drain) VGS=0V, VDS=28V
Output Capacitance (Drain to Source) VGS=0V, VDS=28V
Drain to Source Resistance, VGS=10V, VDS=250mV
mA / V
Volt
Volt
pF
pF
pF
Ω
590
3.8
65
27.5
0.81
14.65
0.6
Quality Specifications
Parameter
Unit
Min
Typical Max
ESD Rating
MTTF
RTH
Human Body Model
85oC Leadframe, 200oC Channel
Thermal Resistance (Junction to Case)
Volts
Hours
ºC/W
500
1.2 X 106
4
Pin Description
Pin #
Function
1
Gate
2
Flange
Drain
Source, Gnd
Description
Transistor RF input and gate bias voltage. The gate bias voltage must be temperature compensated to main-
tain constant bias current over the operating temperature range. Care must be taken to protect against video
transients that exceed the recommended maximum input power or voltage. .
Transistor RF output and drain bias voltage. Typical voltage is 28V.
Exposed area on the bottom side of the package needs to be mechanically attached to the ground plane of the
board for optimum thermal and RF performance. See mounting instructions for recommendation.
Absolute Maximum Ratings
Parameters
Value
Unit
Drain Voltage (VDS )
Gate Voltage (VGS)
RF Input Power
35
V
20
V
+33
dBm
Load Impedance for Continuous Operation
Without Damage
10:1
VSWR
Output Device Channel Temperature
+200
ºC
Lead Temperature During Solder Reflow
+270
ºC
Operating Temperature Range
-20 to +90
ºC
Storage Temperature Range
-40 to +100 ºC
Operation of this device beyond any one of these limits may
cause permanent damage. For reliable continuous operation see
typical setup values specified in the table on page one.
Pin Diagram
ESD
Protection
Pin 1
Pin 2
Case Flange = Ground
Caution: ESD Sensitive
Appropriate precaution in handling, packaging
and testing devices must be observed.
303 S. Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-103754 Rev D