SCN2C60 Datasheet, PDF (2/5 Pages) List of Unclassifed Manufacturers – Sensitive Gate Silicon Controlled Rectifiers

SCN2C60
Electrical Characteristics ( T_C = 25 °C unless otherwise noted )
Symbol
Items
Conditions
Ratings
Unit
Min. Typ. Max.
I_DRM
Repetitive Peak Off-State
Current
V_AK = V_DRM or V_{RRM ;} R_GK = 1000 Ω
T_C = 25 °C
─
T_C = 125 °C
─
─
10
㎂
─
200
V_TM
Peak On-State Voltage (1)
( I_TM =3 A, Peak )
─
1.2
1.7
V
I_GT
Gate Trigger Current (2)
V_AK = 6 V, R_L=100 Ω
T_C = 25 °C
─
T_C = - 40 °C
─
─
200
㎂
─
500
V_GT
Gate Trigger Voltage (2)
V_D = 7 V, R_L=100 Ω
T_C = 25 °C
─
T_C = - 40 °C
─
─
0.8
V
─
1.2
V_GD
Non-Trigger Gate Voltage (1) V_AK = 12 V, R_L=100 Ω T_C = 125 °C
0.2
─
─
V
V_GM = 0.67V_DRM,
dv/dt
Critical Rate of Rise Off-State
Voltage
Exponential waveform , R_GK = 1000 Ω
200
─
T_J = 125 °C
─ V/㎲
di/dt
Critical Rate of Rise On-State
Current
I_TM = 3A, Ig = 10mA
50 A/㎲
I_H
Holding Current
R_th(j-c)
R_th(j-a)
Thermal Impedance
Thermal Impedance
V_AK = 12 V, Gate Open
T_C = 25 °C
─
T_C = - 40 °C
─
Junction to case
─
Junction to Ambient
─
2
5.0
mA
─
10
─
50 °C/W
─
160 °C/W
※ Notes :
1. Pulse Width ≤ 1.0 ms , Duty cycle ≤ 1%
2. Does not include R_GK in measurement.
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