P01N02LMB Datasheet, PDF (2/3 Pages) List of Unclassifed Manufacturers – N-Channel Logic Level Enhancement Mode Field Effect Transistor

NIKO-SEM
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P01N02LMB
SOT-23 (M3)
DYNAMIC
Input Capacitance
C_iss
120
Output Capacitance
C_oss
V_GS = 0V, V_DS = 15V, f = 1MHz
100
pF
Reverse Transfer Capacitance
C_rss
85
Total Gate Charge²
Q_g
11
Gate-Source Charge²
Q_gs
V_DS = 0.5V_(BR)DSS, V_GS = 10V,
3.0
nC
Gate-Drain Charge²
Q_gd
I_D = 1A
5.8
Turn-On Delay Time²
t_d(on)
7
Rise Time²
Turn-Off Delay Time²
t_r
V_DS = 15V, R_L = 1Ω
20
nS
t_d(off)
I_D ≅ 1A, V_GS = 10V, R_GS = 50Ω
13
Fall Time²
t_f
19
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T_C = 25 °C)
Continuous Current
Pulsed Current³
Forward Voltage¹
I_S
I_SM
V_SD
I_F = I_S, V_GS = 0V
1.2
A
12
1.3 V
Reverse Recovery Time
Reverse Recovery Charge
t_rr
I_F = I_S, dl_F/dt = 100A / µS
Q_rr
1_{Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2％.}
2_{Independent of operating temperature.}
3_{Pulse width limited by maximum junction temperature.}
70
nS
0.22
µC
REMARK: THE PRODUCT MARKED WITH “102B”
2
AUG-18-2001