LD1106S Datasheet, PDF (2/5 Pages) List of Unclassifed Manufacturers – High Performance N-Channel POWERJFET with Schottky Diode

Thermal Resistance
Symbol
Parameter
RΘ_JA Thermal Resistance Junction-to-Ambient
RΘ_JC Thermal Resistance Junction-to-Case
DPAK
Ratings
85
2.0
Electrical Specifications
(TA = +25°C, unless otherwise noted.)
The φ denotes a specification which apply over the full operating temperature range.
Symbol
Parameter
Conditions
Min.
Static
BV_DSX
BV_GDO
Breakdown Voltage
Drain to Source
Breakdown Voltage
Gate to Drain
I_D = 0.5 mA
V_GS= -4 V
I_G = -50µA
φ 15
φ
BV_GSO Breakdown Voltage
I_G = -1 mA
φ
Gate to Source
R_DS(ON) Static Drain to Source¹ On
I_G = 40 mA, I_D=10A
Resistance (Current flows
I_G = 10 mA, I_D=10A
drain-to-source) See Fig. 1
I_G = 5 mA, I_D=10A
V_GS(TH) Gate Threshold Voltage
V_DS=0.1 V, I_D=250µA
-1200
Dynamic
Q_G
Total Gate Charge
Q_GD
Gate to Drain Charge
Q_GS
Gate to Source Charge
Q_SW
Switching Charge
R_G
Gate Resistance
∆V_Drive =5V, I_D=10A,V_DS=15V
T_D(ON)
T_R
T_D(OFF)
T_F
C_ISS
C_OSS
C_GS
C_GD
C_DS
Turn-on Delay Time
Rise Time
Turn-off Delay
Fall Time
Input Capacitance
Output Capacitance
Gate-Source Capacitance
Gate-Drain Capacitance
Drain-Source Capacitance
φ
V_DD=12V, I_D=10A
φ
V_Drive = 5 V
Clamped Inductive Load
V_DS=10V, V_GS= -5 V, 1MHz.
Typ.
-12
5.5
6
7
11
6.5
1.0
7.5
1
5
10
2
8
1600
450
1100
400
110
Schottky Diode
I_R
Reverse Leakage
V_F
Forward Voltage
V_F
Forward Voltage
V_F
Forward Voltage
Qrr
Reverse Recovery Charge
Notes:
1. Pulse width <= 500µs, duty cycle < = 2%
V_R=15V
I_F = 1 A
I_F = 10 A
I_F = 20 A
I_s = 20 A di/dt = 200A/us,
0.25
750
1100
4
Units
°C/W
°C/W
Max. Units
V
-18
V
-10
V
8
mΩ
9
mΩ
-500 mV
nC
nC
nC
nC
Ω
ns
pF
0.5 mA
400 mV
900 mV
mV
nC
2
LD1106S
Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA
Tel. [phone] Fax [phone] www.lovoltech.com
Product Specification