IW4019B Datasheet, PDF (2/5 Pages) List of Unclassifed Manufacturers – Quad AND/OR Select Gate

IW4019B
MAXIMUM RATINGS^*
Symbol
Parameter
Value
Unit
V_CC
V_IN
V_OUT
I_IN
P_D
DC Supply Voltage (Referenced to GND)
DC Input Voltage (Referenced to GND)
DC Output Voltage (Referenced to GND)
DC Input Current, per Pin
Power Dissipation in Still Air, Plastic DIP+
SOIC Package+
-0.5 to +20
V
-0.5 to V_CC +0.5
V
-0.5 to V_CC +0.5
V
±10
mA
750
mW
500
P_D Power Dissipation per Output Transistor
Tstg Storage Temperature
100
mW
-65 to +150
°C
T_L
Lead Temperature, 1 mm from Case for 10 Seconds
260
°C
(Plastic DIP or SOIC Package)
*_{Maximum Ratings are those values beyond which damage to the device may occur.}
Functional operation should be restricted to the Recommended Operating Conditions.
+Derating - Plastic DIP: - 10 mW/°C from 65° to 125°C
SOIC Package: : - 7 mW/°C from 65° to 125°C
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
V_CC
V_IN, V_OUT
DC Supply Voltage (Referenced to GND)
DC Input Voltage, Output Voltage (Referenced to GND)
T_A
Operating Temperature, All Package Types
Min Max Unit
3.0
18
V
0
V_CC
V
-55 +125
°C
This device contains protection circuitry to guard against damage due to high static voltages or electric fields.
However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this
high-impedance circuit. For proper operation, V_IN and V_OUT should be constrained to the range GND≤(V_IN or
V_OUT)≤V_CC.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or V_CC). Unused
outputs must be left open.
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