FP15R06KL4 Datasheet, PDF (2/12 Pages) List of Unclassifed Manufacturers – Elektrische Eigenschaften / Electrical properties

Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FP15R06KL4
Modul Isolation/ Module Isolation
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
NTC connected to Baseplate
Vorläufig
Preliminary
V_ISOL
2,5
kV
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Diode Gleichrichter/ Diode Rectifier
Durchlaßspannung
forward voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Sperrstrom
reverse current
T_vj = 150°C,
T_vj = 150°C
T_vj = 150°C
T_vj = 150°C,
I _F = 15 A
V _R = 800 V
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip
T_C = 25°C
Transistor Wechselrichter/ Transistor Inverter
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
V_GE = 15V, T_vj = 25°C, I_C =
V_GE = 15V, T_vj = 125°C, I_C =
Gate-Schwellenspannung
gate threshold voltage
V_CE = V_GE, T_vj = 25°C, I_C =
15 A
15 A
0,4mA
Eingangskapazität
input capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
f = 1MHz, T_vj = 25°C
V_CE = 25 V, V_GE = 0 V
V_GE = 0V, T_vj =125°C, V_CE = 600V
Gate-Emitter Reststrom
gate-emitter leakage current
Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
Anstiegszeit (induktive Last)
rise time (inductive load)
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
Fallzeit (induktive Last)
fall time (inductive load)
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
Kurzschlußverhalten
SC Data
V_CE = 0V, V_GE =20V, T_vj =25°C
I_C = I_Nenn,
V_CC =
V_GE = ±15V, T_vj = 25°C, R_G =
V_GE = ±15V, T_vj = 125°C, R_G =
I_C = I_Nenn,
V_CC =
V_GE = ±15V, T_vj = 25°C, R_G =
V_GE = ±15V, T_vj = 125°C, R_G =
I_C = I_Nenn,
V_CC =
V_GE = ±15V, T_vj = 25°C, R_G =
V_GE = ±15V, T_vj = 125°C, R_G =
I_C = I_Nenn,
V_CC =
V_GE = ±15V, T_vj = 25°C, R_G =
V_GE = ±15V, T_vj = 125°C, R_G =
I_C = I_Nenn,
V_CC =
V_GE = ±15V, T_vj = 125°C, R_G =
L_S =
I_C = I_Nenn,
V_CC =
V_GE = ±15V, T_vj = 125°C, R_G =
L_S =
t_P £ 10µs, V_GE £ 15V, R_G =
T_vj£125°C,
V_CC =
dI/dt =
300 V
68 Ohm
68 Ohm
300 V
68 Ohm
68 Ohm
300 V
68 Ohm
68 Ohm
300 V
68 Ohm
68 Ohm
300 V
68 Ohm
80 nH
300 V
68 Ohm
80 nH
68 Ohm
360 V
1000 A/µs
min. typ. max.
V_F
-
1
-
V
V_(TO)
-
0,71
-
V
r_T
-
18
-
mW
I_R
-
5
-
mA
R_AA'+CC'
-
11
-
mW
min. typ. max.
V_{CE sat}
-
1,95 2,55
V
-
2,2
-
V
V_GE(TO) 4,5
5,5
6,5
V
C_ies
-
0,8
-
nF
I_CES
-
5,0
-
mA
I_GES
-
-
400 nA
t_d,on
-
37
-
ns
-
34
-
ns
t_r
-
37
-
ns
-
37
-
ns
t_d,off
-
216
-
ns
-
223
-
ns
t_f
-
17
-
ns
-
26
-
ns
E_on
-
0,6
-
mWs
E_off
-
0,4
-
mWs
I_SC
-
60
-
A
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