CMT10N40 Datasheet, PDF (2/5 Pages) List of Unclassifed Manufacturers – POWER MOSFET

ORDERING INFORMATION
Part Number
CMT10N40N220
Package
TO-220
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, T_J = 25 .
Characteristic
Drain-Source Breakdown Voltage
(V_GS = 0 V, I_D = 250 A)
Drain-Source Leakage Current
(V_DS = 400 V, V_GS = 0 V)
(V_DS = 400 V, V_GS = 0 V, T_J = 125 )
Gate-Source Leakage Current-Forward
(V_gsf = 20 V, V_DS = 0 V)
Gate-Source Leakage Current-Reverse
(V_gsr = 20 V, V_DS = 0 V)
Gate Threshold Voltage
(V_DS = V_GS, I_D = 250 A)
Static Drain-Source On-Resistance (V_GS = 10 V, I_D = 5.0A) *
Drain-Source On-Voltage (V_GS = 10 V)
(I_D = 5.0 A)
Forward Transconductance (V_DS = 50 V, I_D = 5.0A) *
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(V_DS = 25 V, V_GS = 0 V,
f = 1.0 MHz)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
(V_DD = 200 V, I_D = 10.0 A,
V_GS = 10 V,
R_G = 10Ω) *
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(V_DS = 320 V, I_D = 10.0 A,
V_GS = 10 V)*
Internal Drain Inductance
(Measured from the drain lead 0.25” from package to center of die)
Internal Drain Inductance
(Measured from the source lead 0.25” from package to source bond pad)
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
Forward Turn-On Time
Reverse Recovery Time
(I_S = 10.0 A, V_GS = 0 V,
d_IS/d_t = 100A/µs)
* Pulse Test: Pulse Width 300µs, Duty Cycle 2%
** Negligible, Dominated by circuit inductance
CMT10N40
POWER MOSFET
Symbol
V_(BR)DSS
I_DSS
I_GSSF
I_GSSR
V_GS(th)
R_DS(on)
V_DS(on)
g_FS
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
Q_g
Q_gs
Q_gd
L_D
L_S
CMT10N40
Min
Typ
Max
400
25
250
100
100
2.0
4.0
0.55
6.0
5.8
1570
230
55
25
37
75
31
46
63
10
23
4.5
7.5
Units
V
A
nA
nA
V
Ω
V
mhos
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nH
nH
V_SD
1.5
V
t_on
**
ns
t_rr
250
ns
2001/11/07 Draft
Champion Microelectronic Corporation
Page 2