BFR91A Datasheet, PDF (2/4 Pages) Vishay Siliconix – Silicon NPN Planar RF Transistor

BFR91A
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
Characteristic
Symbol Min
Typ
Max
Unit
DC CHARACTERISTICS
Collector Cutoff Current,
I_E= 0mA, V_CB=10V
Emitter Cutoff Current,
I_C= 0mA, V_EB= 2V
Collector – Emitter Breakdown Voltage,
I_C= 1mA, I_B= 0mA
DC Current Gain,
I_E=30mA, V_CB= 5V
Collector – Emitter Saturation Voltage,
I_C= 1mA, I_B= 0mA
AC CHARACTERISTICS
Transition Frequency,
I_C=30mA, V_CB= 5V, f=300MHz
Collector-Base Capacitance,
I_E= 0mA, V_CB=10V, f= 1MHz
Noise Figure,
I_E= 5mA, V_CE= 8V, f=800MHz
Power Gain,
I_E=30mA, V_CE= 8V, f=800MHz
h_FE CLASSIFICATION
Class
K
I_CBO
–
– 100
I_EBO
–
–
10
V_(BR)CEO
12
–
–
h_FE
50
120
300
V_CE(sat)
– 100
400
f_T
4.5
6.0
–
C_cb
–
0.4
0.9
N_F
–
1.6
2.0
G_PS
12.0 13.0
–
nA
µA
V
–
mV
GHz
pF
dB
dB
H
F
E
h_FE
50 to 300
50 to 100
80 to 160
125 to 250
TIPICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
350
1
300
0,8
250
0,6
200
150
0,4
100
V_CB=10V
0,2
f=1MHZ
50
0
0
20 40 60 80 100 120 140 160
Tamb - Ambient Temperature (°C)
Figure 1. Total Power Dissipation vs.
Ambient Temperature
0
0
5
10
15
20
VCB - Collector Base Voltage (V)
Figure 2. Collector – Base Capacitance vs.
Collector – Base Voltage
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