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BD183 Datasheet, PDF (2/3 Pages) List of Unclassifed Manufacturers – NPN SILICON TRANSISTOR POWER LINERAR AND SWITCHING APPLICATIONS
BD181 – BD182 – BD183
Symbol
Ratings
PTOT
TJ Ts
Power dissipation
Junction
Storage Temperature
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-C
Thermal Resistance, Junction to Case
BD181
BD182
BD183
BD181
BD182
BD183
Value
117
Unit
W
200
°C
-65 to +200
Value
1.5
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Mx Unit
IEBO
ICBO
VCEO(BR)
VCE(SAT)
VBR(CER)
Emitter-Base Cutoff Current VEB= 7 V, IC=0
Collector-Base Cutoff
Current
Collector-Emitter
Breakdown Voltage (*)
VCB=45 V
tj=200°C
VCB=60 V
tj=200°C
VCB=80 V
tj=200°C
IC=200 mA, IB=0
Collector-Emitter saturation
Voltage (*)
Collector-Emitter
Breakdown Voltage (*)
IC=3 A, IB=0.3 A
IC=4 A, IB=0.4 A
IC=3 A, IB=0.3 A
IC=200 mA, RBE=100 Ω
BD181
BD182
BD183
BD181
BD182
BD183
BD181
BD182
BD183
BD181
BD182
BD183
BD181
BD182
BD183
--
- - 5.0 A
--
- - 2.0
- - 5.0 mA
- - 5.0
45 - -
60 -
-
V
80 - -
- - 1.0
- - 1.0 V
- - 1.0
55 - -
70 -
-
V
85 - -
COMSET SEMICONDUCTORS
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