1N5554 Datasheet, PDF (12/28 Pages) List of Unclassifed Manufacturers – This specification covers the performance requirements for silicon, general purpose,

MIL-PRF-19500/420H
* 4.3.1 Thermal impedance Z_θJX measurements for screening. The Z_θJX measurements shall be performed in
accordance with method 3101 of MIL-STD-750. The maximum screen limit shall be developed by the supplier using
statistical methods and it shall not exceed the table I, subgroup 2 herein. See 4.4.1 for test conditions.
4.3.1.1 Thermal impedance (Z_θJX measurements) for initial qualification or requalification. The Z_θJX
measurements shall be performed in accordance with method 3101 of MIL-STD-750 (read and record date Z_θJX).
Z_θJX shall be supplied on one lot (500 pieces minimum and a thermal response curve shall be submitted.) Twenty-
two of these samples shall be serialized and provided to the qualifying activity for correlation prior to shipment of
parts. Measurements conditions shall be in accordance with 4.4.1.
* 4.3.2 Power burn-in conditions. Power burn-in conditions are as follows (see 4.5.2, 4.5.2.1) adjust I_O to achieve
the required TJ.
4.3.3 Screening (JANHC and JANKC). Screening of die shall be in accordance with appendix G of
MIL-PRF-19500. As a minimum, die shall be 100-percent probed to ensure compliance with table I, subgroup 2.
Burn-in duration for the JANKC level follows JANS requirements; the JANHC follows JANTX requirements.
* 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as
specified herein.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I
herein. The following test conditions shall be used for Z_θJX, table I: Z_θJX ≤ 1.5°C/W.
a. I_M ............................. 1 mA to 10 mA.
b. I_H.............................. 5 A minimum.
c. t_H.............................. 10 ms.
d. t_MD ........................... 100 µs maximum.
e. t_SW ........................... 5 µs maximum.
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