WSB1151 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – PNP EPITAXIAL SILICON TRANSISTOR

HIGH CURRENT AMPLIFIER
◇ Low Collector Saturation Voltage
◇ Complement to WSD1691
WSB1151
PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃)
Characteristic
Symbol Value Unit
Collector-Base Voltage
VCBO -60
V
Collector-Emitter Voltage
VCEO -60
V
Emitter-Base voltage
VEBO
-7
V
Collector Current(DC)
IC
-5.0 A
Collector Current(Pulse)
IC
Collector Power Dissipation(Tc=25℃) PC
Collector Power Dissipation(Ta=25℃) PC
Junction Temperature
Tj
-8.0 A
20 W
1.3 W
150 ℃
Storage Temperature
Tstg
-55~
+150
℃
WR0459
1 ²³
1. Emitter
2. Collector
3. Base
ELECTRICAL CHARACTERISTICS
(Ta=25℃, unless otherwise specified)
Characteristic
Collector Cut-off Current
Emitter Cut-off Current
*DC Current Gain
*Collector-Emitter Saturation Voltage
Symbol
Test Condition
ICBO VCB=-50V ,IE=0
IEBO VEB=-7V ,IC=0
hFE1
#hFE2
hFE3
VCE=-1V ,IC=-100mA
VCE=-1V ,IC=-2.0A
VCE=-2V, IC=-5.0A
VCE(sat) IC=-2A, IB=-200mA
Min TYP
MA
X
Unit
-10 ㎂
-10 ㎂
60
100 200 400
50
-0.14 -0.3 V
*Base-Emitter Saturation Voltage
Turn on Time
Storage Time
Fall Time
VBE(sat) IC=-2A, IB=-200mA
tON IC=-2.0A, RL=5Ω
tSTG IB1=-IB2=200mA,
tF
VCC=-10V
* Pulse Test :PW=350㎲ ,Duty Cycle=2% Pulsed
# hFE(2) Classification:
Classification
O
Y
hFE
100~200
160~320
G
200~400
-0.9 -1.2 V
0.15 1 ㎲
0.78 2.5 ㎲
0.18 1 ㎲
JAN. 2003 REV:00
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