TC1N4148 Datasheet, PDF (1/6 Pages) List of Unclassifed Manufacturers – 500 mW DO-35 Hermetically Sealed Glass Fast Switching Diodes

®
TAK CHEONG
500 mW DO-35 Hermetically
Sealed Glass Fast Switching
Diodes
SEMICONDUCTOR
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
PD
Power Dissipation
500
mW
TSTG
Storage Temperature Range
-65 to +200
°C
TJ
Operating Junction Temperature
+175
°C
WIV
Working Inverse Voltage
75
V
IO
Average Rectified Current
150
mA
IFM
Non-repetitive Peak Forward Current
450
mA
IFSURGE
Peak Forward Surge Current
2
A
These ratings are limiting values above which the serviceability of the diode may be impaired.
AXIAL LEAD
DO35
DEVICE MARKING DIAGRAM
L
xx
xx
L
: Logo
TC1Nxxxx : Device Code
Specification Features:
Fast Switching Device (TRR <4.0 nS)
DO-35 Package (JEDEC)
Through-Hole Device Type Mounting
Hermetically Sealed Glass
Compression Bonded Construction
All external surfaces are corrosion resistant and leads are readily solderable
Cathode indicated by polarity band
Cathode
Anode
ELECTRICAL SYMBOL
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Limits
Test Condition
Unit
Min Max
BV
Breakdown Voltage
IR
Reverse Leakage Current
VF
Forward Voltage
TC1N4448, TC1N914B
TC1N4148, TC1N4148
TC1N4448, TC1N914B
TRR
Reverse Recovery Time
C
Capacitance
IR=100µA
IR=5µA
VR=20V
VR=75V
IF=5mA
IF=10mA
IF=100mA
IF=IR=10mA
RL=100Ω
IRR=1mA
VR=0V, f=1MHZ
100
75
25
5
0.62 0.72
1.0
1.0
4
4
Volts
nA
µA
Volts
nS
pF
March 2002 / A
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