SMT820 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – High Performance Infrared TOP IR LED

SMT820 High Performance Infrared TOP IR LED
SMT820 consists of an AlGaAs LED mounted on the lead frame as TOP LED package
and is 15mW typical of output power.
It emits a spectral band of radiation at 820nm.
♦Outer dimension（Unit:mm）
♦Specifications
1) Product Name
2) Type No.
3) Chip
(1) Chip Material
(2) Peak Wavelength
4) Package
(1) Lead Frame Die
(2) Package Resin
(3) Lens
TOP IR LED
SMT820
AlGaAs
820ｎｍ ｔｙｐ.
Silver Plated
PPA Resin
Epoxy Resin
♦Absolute Maximum Rating
Item
Power Dissipation
Forward Current
Pulse Forward Current
Reverse Voltage
Operating Temperature
Storage Temperature
Soldering Temperature
Symbol Maximum Rated Value Unit Ambient Temperature
PD
190
mW
Ta=25°C
IF
100
mA
Ta=25°C
IFP
500
mA
Ta=25°C
VR
5
V
Ta=25°C
TOPR
-20 ~ +80
°C
TSTG
-30 ~ +80
°C
TSOL
240
°C
‡Pulse Forward Current condition: Duty=1% and Pulse Width=10us.
‡Soldering condition: Soldering condition must be completed within 3 seconds at 260°C
♦Electro-Optical Characteristics [Ta=25°C]
Item
Symbol Condition Minimum
Forward Voltage
VF
IF=50mA
Reverse Current
IR
VR=5V
Total Radiated Power
PO
IF=50mA
8.0
Radiant Intensity
IE
IF=50mA
3.0
Peak Wavelength
λP
IF=50mA
Half Width
∆λ
IF=50mA
Viewing Half Angle
θ 1/2 IF=50mA
Rise Time
tr ＩF=50mA
Fall Time
tf ＩF=50mA
‡Total Radiated Power is measured by Photodyne #500
‡Radiant Intensity is measured by Tektronix J-6512.
Typical
1.60
15.0
6.0
820
40
±55
60
40
Maximum
1.80
10
Unit
V
uA
mW
mW/sr
nm
nm
deg.
ns
ns