SLD1332V Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – The Industrys Highest Power 670 nm Band Laser Diode Achieves 500 mW Optical Power Output

Light-current
800
CW drive
Tc = 25°C
600
400
200
Far field pattern
1.0
CW drive
Tc = 25°C
0.8 _{Po = 500 mW}
θ⊥
0.6
θ//
0.4
0.2
0
0
300 600 900 1200
If [mA]
0.0
–40 –20 0
20 40
Angle [deg.]
s Figure 1 SLD1332V Representative Characteristics
Spectrum
1.0
CW drive
Tc = 25°C
0.8 _{Po = 500 mW}
0.6
0.4
0.2
0.0
650 660 670 680 690
Wavelength [nm]
P-side electrode
Laser beam
emitting point
100 µm
Active layer
GaAs substrate
N-side
electrode
s Figure 2 SLD1332V Chip Structure
s Table 1 SLD1332V Main Characteristics
Item
Threshold current
Operating current
Operating voltage
Oscillation wavelength
Radiation
angle
Parallel to
junction
Perpendicular
to junction
Differential efficiency
Symbol Typical value Unit
Ith
400
mA
Iop
900
Vop
2.4
V
λp
670
nm
θ//
8
deg.
θ⊥
24
ηD
1.0
mW/mA
Conditions: TC = 25°C
Po = 500 mW@CW
⊥
//
–3 –2 –1 0
1
2
3
Unit: µm
s Figure 3 SLD1332V Near-Field Pattern
–80 –60 –40 –20 0
20 40 60 80
Unit: µm