SC2412KLT1 Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – General Purpose Transistors

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
1
BASE
3
COLLECTOR
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector–Emitter Voltage
V _CEO
Collector–Base Voltage
V _CBO
Emitter–Base Voltage
V _EBO
Collector Current — Continuous I _C
Collector power dissipation
P_C
Junction temperature
T_j
Storage temperature
T _stg
50
V
60
V
7.0
V
150
mAdc
0.2
W
150
°C
-55 ~+150 °C
DEVICE MARKING
2SC2412K*LT1 =G1F
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted.)
Characteristic
Collector–Emitter Breakdown Voltage
(I_C = 1 mA)
Emitter–Base Breakdown Voltage
(I_E = 50 µA)
Collector–Base Breakdown Voltage
(I_C = 50 µA)
Collector Cutoff Current
(V_CB = 60 V)
Emitter cutoff current
(V_EB = 7 V)
Collector-emitter saturation voltage
(I_C/ I_B = 50 mA / 5m A)
DC current transfer ratio
(V _CE = 6 V, I _C= 1mA)
Transition frequency
(V _CE = 12 V, I _E= – 2mA, f =30MHz )
Output capacitance
(V _CB = 12 V, I _E= 0A, f =1MHz )
Symbol
V _(BR)CEO
V _(BR)EBO
V _(BR)CBO
I _CBO
I _EBO
V _CE(sat)
h _FE
f_T
C _ob
Min
50
7
60
—
—
—
120
—
—
h _FE values are classified as follows:
*
Q
R
hFE
120~270
180~390
S
270~560
2SC2412K*LT1
3
1
2
CASE 318–07, STYLE 6
SOT– 23 (TO–236AB)
Typ
Max Unit
—
—
V
—
—
V
—
—
V
—
0.1
µA
—
0.1
µA
—
0.4
V
––
560
––
180
––
MHz
2.0
3.5
pF
M36–1/3