S29C51001T Datasheet, PDF (1/16 Pages) List of Unclassifed Manufacturers – 1 MEGABIT (131,072 x 8 BIT) 5 VOLT CMOS FLASH MEMORY

SyncMOS Technologies Inc.
Features
s 128Kx8-bit Organization
s Address Access Time: 70, 90, 120 ns
s Single 5V ± 10% Power Supply
s Sector Erase Mode Operation
s 8KB Boot Block (lockable)
s 512 bytes per Sector, 256 Sectors
– Sector-Erase Cycle Time: 10ms (Max)
– Byte-Program Cycle Time: 20µs (Max)
s Minimum 10,000 Erase-Program Cycles
s Low power dissipation
– Active Read Current: 20mA (Typ)
– Active Program Current: 30mA (Typ)
– Standby Current: 100µA (Max)
s Hardware Data Protection
s Low V_CC Program Inhibit Below 3.2V
s Self-timed program/erase operations with end-
of-cycle detection
– DATA Polling
– Toggle Bit
s CMOS and TTL Interface
s Available in two versions
– S29C51001T (Top Boot Block)
– S29C51001B (Bottom Boot Block)
s Packages:
– 32-pin Plastic DIP
– 32-pin TSOP-I
– 32-pin PLCC
S29C51001T/S29C51001B
1 MEGABIT (131,072 x 8 BIT)
5 VOLT CMOS FLASH MEMORY
Description
The S29C51001T/S29C51001B is a high speed
131,072 x 8 bit CMOS flash memory. Programming
or erasing the device is done with a single 5 Volt
power supply. The device has separate chip enable
CE, program enable WE, and output enable OE
controls to eliminate bus contention.
The S29C51001T/S29C51001B offers a combi-
nation of features: Boot Block with Sector Erase
Mode. The end of program/erase cycle is detected
by DATA Polling of I/O₇ or by the Toggle Bit I/O₆.
The S29C51001T/S29C51001B features a
sector erase operation which allows each sector to
be erased and reprogrammed without affecting
data stored in other sectors. The device also
supports full chip erase.
Boot block architecture enables the device to
boot from a protected sector loaded either at the
top (S29C51001T) or the bottom (S29C51001B)
sector. All inputs and outputs are CMOS and TTL
compatible.
The S29C51001T/S29C51001B is ideal for
applications that require updatable code and data
storage.
S29C51001T/S29C51001B V1.0 February 2003
1