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RT240PD Datasheet, PDF (1/10 Pages) List of Unclassifed Manufacturers – Preliminary 10W Power Transistor | |||
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Preliminary 10W
Power Transistor
RT240PD
Product Features
⢠High Output Power
P1dB = 40dBm(Typ.)@2.14GHz
⢠High Efficiency
⢠High Power Gain
G1dB = 17dB(Typ.)@900MHz
G1dB = 13dB(Typ.)@2.14GHz
⢠High Linearity
⢠Hermetically sealed package
⢠GaN HFET
Application
⢠Repeater
⢠RF Sub-Systems
⢠Base Station
⢠Converter
⢠IMT-2000
⢠ISM
⢠MMDS
⢠Wi-Fi, Wi-max
Description
The RT240PD is designed for base stations and cell extenders as cellular
and GSM, PCS, IMT-2000, ISM, MMDS, Wi-Fi, Wi-MAX frequency systems,
GaN HFET is used and attached on a gold sub carrier.
z Typical Specifications
Parameter
Specifications
Frequency (MHz)
900
1800
2140
2640
3500
Small Signal Gain (dB)
17
14
13
12
10
VSWR (Input / Output)
2.0 : 1
1dB Compression Point (dBm)
40
39
*CDMA Power (1FA) (dBm)
33
33
*CDMA Power (7FA) (dBm)
29
29
Vdd / Ids (CDMA Only)
**WCDMA Power (1FA) (dBm)
**WCDMA Power (2FA) (dBm)
**WCDMA Power (4FA) (dBm)
+28V / 600mA
31
28
26
OIP3 (dBm)
50 @ 27dBm/tone
48 @ 27dBm/tone
Operating Temp Range
-25â ~ +70â
* IS-95 ( ±750kHz offset@-29dBc ACPR, ±1.98MHz offset@-39dBc ACPR )
** Test Model 1ch/64DPCH ( ±5MHz offset@-45dBc ACLR, ±10MHz offset@-50dBc ACLR )
z All specifications may change without notice.
z www.rfhic.com
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