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RLT6505G Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – Visible Wavelength Laserdiode
ROITHNER LASERTECHNIK
A-1040 WIEN, FLEISCHMANNGASSE 9
TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43
e-mail: rlt@mcb.at http://www.roithner.mcb.at
RLT6505G TECHNICAL DATA
Visible Wavelength Laserdiode
Structure: AlGaInP, index guided, single transverse mode
Lasing wavelength: 650 nm
Max. optical power: 5 mW
Package: 9 mm G or 5.6mm MG
PIN CONNECTION:
1) Laser diode cathode
2) Laser diode anode and photodiode cathode
3) Photodiode anode
Maximum Ratings (Tc=25°C)
CHARACTERISTIC
Optical Output Power
LD Reverse Voltage
PD Reverse Voltage
Operation Case Temperature
Storage Temperature
SYMBOL
Po
VR(LD)
VR(PD)
TC
TSTG
RATING
5
2
30
-10 .. +40
-40 .. +85
UNIT
mW
V
V
°C
°C
Optical-Electrical Characteristics (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN
Optical Output Power
Po
kink free
Threshold Current
Ith
20
Operation Current
Iop
Po =5mW
Operating Voltage
Vop
Po =5mW
Lasing Wavelength
lp
Po =5mW
Beam Divergence
q1
Po =5mW
5
Beam Divergence
q2
Po =5mW
25
Astigmatism
As
Po =5mW, NA=0.4
Monitor Current
Im
Po =5mW, Vr=5V
TYP
30
45
2.2
650
8
31
11
10
MAX
5
40
70
2.7
655
11
37
UNIT
mW
mA
mA
V
nm
°
°
µm
µA