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| RLT1060M-350G Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – High Power Infrared Laser Diode | |||
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ROITHNER LASERTECHNIK
SCHOENBRUNNER STRASSE 7, VIENNA, AUSTRIA
TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44
office@roithner-laser.com www.roithner-laser.com
RLT1060M-350G TECHNICAL DATA
High Power Infrared Laser Diode
Lasing mode structure: multi mode
Lasing wavelength: typ. 1060 nm
Optical power: 350 mW
Package: 9 mm (SOT-148)
PIN CONNECTION:
NOTE!
LASERDIODE
MUST BE COOLED!
1) Laser diode anode
2) Laser diode cathode and photodiode cathode
3) Photodiode anode
Absolute Maximum Ratings (Tc = 25°C)
CHARACTERISTIC
SYMBOL
Optical Output Power
LD Reverse Voltage
PD Reverse Voltage
Operating Temperature
Storage Temperature
Po
VR(LD)
VR(PD)
TC
TSTG
RATING
400
1.5
10
-20 .. +40
-40 .. +70
UNIT
mW
V
V
°C
°C
Optical-Electrical Characteristics (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION
Optical Output Power
Po
Threshold Current
Ith
Operation Current
Iop
Forward Voltage
Uf
Lasing Wavelength
λp
Spectral Width FWHM
âλ
cw
cw
Po = 350 mW
Po = 350 mW
Po = 350 mW
Po = 350 mW
Beam Divergence
Beam Divergence
Monitor Current
θ//
Po = 350 mW
θâ¥
Po = 350 mW
Im
Po = 350 mW
MIN
370
1055
100
TYP
350
25
380
1.6
1060
0.2
25
40
500
MAX
30
390
1.7
1064
0.3
1500
UNIT
mW
mA
mA
V
nm
nm
°
°
µA
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