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PS0.25-5 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – High Speed epitaxy Low Dark curren 0.25mm active area | |||
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PS0.25-5 TO52S1
PIN Photodiode
Special characteristics:
High Speed epitaxy
Low Dark current
0,25 mm² active area
Parameters:
Active Area
Dark Current
at 20 V
Total Capacitance
at 20 V
Spectral Responsivity
at 800 nm
Shunt Resistance
at 10 mV
Cut-off Frequency 1)
(-3dB)
Rise Time 1)
at 20 V
N.E.P.
at 0 V
at 20 V
Operating temperature
Storage temperature
1) measurement conditions:
Î = 860 nm
RL = 50 â¦
UR = 20 V
PS0.25-5 Ch
0.5 x 0.5 mm
0,25 mm2
max. 4.0 nA
typ. 0.5 nA
typ. 1.8 pF
min. 0.4 A/W
typ. 0.5 A/W
typ. 200 Mâ¦
typ. 0.9 GHz
typ. 0.4 ns
typ. 2* 10-15 W/Hz1/2
typ. 6* 10-15 W/Hz1/2
-20 â¦â¦. + 70 °C
-25 â¦â¦. +100 °C
Package 1 (TO52):
CASE
CATHODE
45°
4
3
1
â
2.54
â
5.4 ± 0.2
â
4.7 ± 0.1
â
2.5 ± 0.05 1)
â
2.0 min. 2)
ANODE
Chip: PS0.25-5
3
view without window cap
Ansicht ohne Fensterkappe
â
0.45
1
4
1): â
3.0 ± 0.05
2): â
2.2 min.
3): 0.25 ± 0.05
www.silicon-sensor.com
Version: 04-03-05
www.pacific-sensor.com
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