PJ2N9015 Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – PRE-APLIFIER, LOW LEVEL&LOW NOISE

PRE-APLIFIER, LOW LEVEL&LOW NOISE
• High total power dissipation (PT=450mW)
• High hFE and good linearity
• Complementary to PJ2N9014
PJ2N9015
PNP Epitaxial Silicon Transistor
TO-92
SOT-23
ABSOLUTE MAXIMUM RATINGS (T a= 25°C)
Characteristic
Symbol Rating Uint
Collector Base Voltage
VCBO
-50
V
Collector Emitter Voltage
VCEO
-45
V
Emitter Base Voltage
VEBO
-5
V
Collector Current
Ic
-100
mA
Collector Dissipation
Pc
450
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg -55 ~150 °C
ELECTRICAL CHARACTERISTICS (T a= 25 °C)
P in : 1. Emitter
2. Base
3. Collector
P in : 1.Base
2.Emitter
3. Collector
ORDERING INFORMATION
Device
PJ2N9015CT
PJ2N9015CX
Operating Temperature
-20℃～+85℃
Package
T O-92
SOT -23
C h aracte ri s ti c
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector- Base Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
Current Gain Bandwidth Produce
Noise Figure
S y m bo l
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
VBE(ON)
Cob
fT
NF
Te st Conditions
I_C= -100μA , I_E=0
IC= -1mA , IB=0
IE= -100μA , IC=0
VCB= -50V , IE = 0
VEB= -5V , IC=0
VEB= -5V, IC = -1 mA
IC= -100 mA, IB= -5mA
IC= -100mA , IB= -5mA
VCE = -5V, Ic = -2 mA
VCB = -10V, IE = 0
f=1MHz
VCE = -5V, Ic = -10 mA
VCE = -5V, Ic = -0.2 mA
f=1KHz, Rs=2KΩ
Mi n
-50
-45
-5
60
-0.6
100
Typ
200
-0.2
-0.82
-0.65
4.5
190
0.7
Max
-50
-50
600
-0.7
-1.0
-0.75
7.0
Un i t
V
V
V
nA
nA
V
V
V
pF
MHz
10
dB
h_EF CLASSIFICATION
Classification
HFE
A
60-150
B
100-300
C
200-600
D
400-1000
1-3
2002/01.rev.A