PJ2N9013 Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – NPN Epitaxial Silicon Transistor

PJ2N9013
NPN Epitaxial Silicon Transistor
1W OUTPUT AMPLIFIER OF POTABLE
RADIOS IN CLAS S B PUS H-PULL OPERATION
• High total power dissipation(PT=625mW)
• High collector Current (Ic=500mA)
• Complementary to PJ2N9012
• Excellent hEF Linearity
TO-92
SOT-23
ABSOLUTE MAXIMUM RATINGS (Ta= 25°C)
Rating
Symbol Value Uint
Collector Base Voltage
VCBO
40
V
Collector Emitter Voltage VCEO
20
V
Emitter Base Voltage
VEBO
5
V
Collector Current
Ic
500
A
Collector Dissipation
Pc
625
W
Junction Temperature
Tj
150
°C
Storage Temperature
T stg
-55 ~150 °C
ELECTRICAL CHARACTERISTICS(Ta= 25°C)
P in : 1. Emitter
2. Base
3. Collector
P in : 1. Base
2. Emitter
3. Collector
ORDERING INFORMATION
Device
PJ2N9013CT
PJ2N9013CX
Operating Temperature
-20℃～+85℃
Package
T O-92
SOT -23
C h aracte ri s ti c
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector- Base Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
h_EF CLASSIFICATION
S y m bo l
BVCBO
BVCEO
BVEBO
ICBO
I_EBO
hFE1
hFE2
VCE(sat)
VBE(sat)
VBE(ON)
Te st Conditions
I_C= 100µA , I_E=0
IC= 1mA , IB=0
IE=100µA , IC=0
VCB= 25V , IE = 0
V_EB= 3V , I_C=0
VEB= 1V, IC =50mA
VEB= 1V, IC =500mA
IC= 500 mA , IB=50mA
IC= 500mA , IB=50mA
VCE =1V, Ic =10mA
Min Typ Max Unit
40
V
20
V
5
V
100
nA
100
nA
64
120
202
40
90
0.16
0.6
V
0.91
1.2
V
0.6
0.67
0.7
V
Classification
hEF
D
64-91
E
78-112
F
96-135
G
112-166
H
144-202
1-3
2002/01.rev.A