PJ2N9012 Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – PNP Epitaxial Silicon Transistor

PJ2N9012
PNP Epitaxial Silicon Transistor
1W OUTPUT AMPLIFIER OF POTABLE
RADIOS IN CLASS B PUSH-PULL OPERATION
• High total power dissipation(PT=625mW)
• High collector Current (Ic=-500mA)
• Complementary to 2N9013
• Excellent hEF Linearity
TO-92
SOT-23
ABSOLUTE MAXIMUM RATINGS (Ta= 25℃)
Rating
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
Ic
Pc
Tj
T stg
Value
-40
-20
-5
-500
625
150
-55 ~150
Uint
V
V
V
A
W
0_C
0_C
ELECTRICAL CHARACTERISTICS(Ta= 25 ⁰C)
P in : 1.Emitter
2.Base
3.Collector
P in : 1. Base
2. Emitter
3. Collector
ORDERING INFORMATION
Device
PJ2N9012CT
PJ2N9012CX
Operating Temperature
-20℃～+85℃
Package
T O-92
SOT -23
C h aracte ri s ti c
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector- Base Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
h_EF CLASSIFICATION
S y m bo l
BVCBO
BVCEO
BVEBO
ICBO
I_EBO
hFE1
hFE2
VCE(sat)
VBE(sat)
VBE(ON)
Te st Conditions
I_C= -100μA , I_E=0
IC= -1mA , IB=0
IE=-100μA , IC=0
VCB= -25V , IE = 0
V_EB= -3V , I_C=0
VEB= -1V, IC =-50mA
VEB= -1V, IC =-500mA
IC= -500 mA , IB=-50mA
IC= -500mA , IB=-50mA
VCE =-1V, Ic =-10mA
Mi n
-40
-20
-5
64
40
0.58
Typ Max Unit
V
V
V
-100
nA
-100
nA
120
202
90
0.14
0.3
V
0.84
1.0
V
0.63
0.7
V
Classification
hEF
D
64-91
E
78-112
F
96-135
G
112-166
H
144-202
1-3
2002/01.rev.A