PJ2N3906 Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – PNP Epitaxial Silicon Transistor

GENERAL PURPO SE TRANSISTO R
• Collector-Emitter Voltage: VCEO = 40V
• Collector Dissipation: PC (max) = 625 mW
PJ2N3906
PNP Epitaxial Silicon Transistor
.
TO-92
SOT-23
ABSOLUTE MAXIMUM RATINGS (Ta = 25 ℃)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
I_C
P_C
Tj
T stg
Value
40
40
5
200
625
150
-55~150
Unit
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta = 25℃)
P in : 1. Emitter
2. Base
3. Collector
P in : 1. Base
2. Emitter
3. Collector
ORDERING INFORMATION
Device
PJ2N3906CT
PJ2N3906CX
Operating Temperature
-20℃～+85℃
Package
T O-92
SOT -23
C h aracte ri s ti c
S y m bo l
Te st Conditions
Collector-Base Breakdown Voltage
*Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Curent
Base Cut-off Current
*DC Current Gain
BV_CBO
BVCEO
BVEBO
ICEX
IBL
hFE
*Collector-Emitter Saturation Voltage
*Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Produce
Turn On Time
T urn Off T ime
VCE(sat)
VBE(sat)
Cob
fT
ton
toff
*Pulse Test: Pulse Width ≤ 300μs.Duty Cycle ≤ 2%
IC= 10μA , IE=0
IC= 1mA , IB=0
IE=10μA , IC=0
VCE= 30V , VBE = 3V
VCE= 30V , VBE = 3V
Ic =0.1mA, VCE =1V
Ic =1mA, VCE =1V
Ic=10mA; VCE =1V
Ic =50 mA, VCE =1V
Ic =100 mA, VCE =1V
IC= 10 mA , IB=1mA
IC= 50mA , IB=5mA
IC= 10 mA , IB=1mA
IC= 50mA , IB=5mA
VCB =5V, IE =0
f=1MHz
Ic =10 mA, VCE =20V
f=100MHz
Vcc =3 V, VBE =0.5V
Ic =10 mA, IB1 =1mA
Vcc =3V, Ic =1mA
IB1=IB2=1 mA
Min Typ Max Uni
t
40
V
40
V
6
V
50
nA
50
nA
60
80
100
300
60
30
0.25
V
0.4
V
0.65
0.85
V
0.95
V
4.5 pF
250
MHz
70
ns
250
ns
1-3
2002/01.rev.A