PH1214-6M Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – RADAR PULSED POWER TRANSISTOR, 6W, 100us PULSE, 10% DUTY

an AMP company
Radar Pulsed Power Transistor, SW, loops Pulse, 10% Duty
1.2 - 1.4 GHz
PHI 214-6M
Features
NPN Silicon Microwave Power Transistor
Common Base Configuration
Broadband Class C Operation
Interdigitated Geometry
Diffused Emitter Ballasting Resistors
Gold Metalization System
Internal Input Impedance Matching
Hermetic‘NletalKeramic Package
Absolute Maximum Ratings at 25°C
UNLESS C-iTRW:SE
‘ICTED. T3LE?ANCES
IN’HIES
=.O”‘j’
A?E (xI, _-- IMETERS
; 13yy’ _I
Electrical Characteristics at 25°C
Parameter
Symbol
Min
Max Units
Test Conditions
Collector-Emitter Breakdown Voltage
BV,,,
65
-
V lc=l 2 mA
Collector-Emitterleakage Current
Thermal Resistance
Output Power
Power Gain
Collector Efficiency
Input Return Loss
ICES
RW(X)
PO”T
6.0
GP
7.0
‘lC
45
RL
6
1.5 mA v,,=40 v
5.8 “C/w V,,=28 V, P&.2 W, F=1.20,1.30,1.40 GHz
-
w V,,=28 V, P,,=1.2 W, F=1.20, 1.30, 1.40GHz
-
dB V,,=28 V, P,,=1.2 W, F=l.20,1.30,1.40 GHz
-
% Vcc=28 V, P,,=l.2 W, F=l.20,1.30,1.40 GHz
-
dB V,,=28 V, P&.2 W, F=l.20,1.30,1.40 GHz
Load Mismatch Tolerance
VSWR-T
-
3:l
- V,,=28 V, P,,=l.2 W, F=l.20,1.30,1.40 GHz
Load Mismatch Stablility
VSWR-S
-
1S:l
- V,,=28 V, P,,=1.2 W, F=l.20,1.30,1.40 GHz
Broadband Test Fixture Impedances
F(GHz)
1.20
z,,m
TBD
z&-4
TBD
1.30
TBD
TBD