PFM21030 Datasheet, PDF (1/13 Pages) List of Unclassifed Manufacturers – 2110-2170 MHz, 30W, 2-Stage Power Module Enhancement-Mode Lateral MOSFETs

PRELIMINARY
PFM21030 SPECIFICATION
2110-2170 MHz, 30W, 2-Stage Power Module
Enhancement-Mode Lateral MOSFETs
This versatile UMTS module provides excellent linearity and efficiency in
a low-cost surface mount package. The PFM21030 includes two stages
of amplification, along with internal sense FETs that are on the same
silicon die as the RF devices. These thermally coupled sense FETs
simplify the task of bias temperature compensation of the overall amplifier.
The module includes RF input, interstage, and output matching elements.
The source and load impedances required for optimum operation of the
module are much higher (and simpler to realize) than for unmatched Si
LDMOS transistors of similar performance.
Package Type: Surface Mount
PN: PFM21030SM
The surface mount package base is typically soldered to a conventional
PCB pad with an array of via holes for grounding and thermal sinking
of the module. Optimized internal construction supports low FET
channel temperature for reliable operation.
Package Type: Flange
PN: PFM21030F
• 27 dB Gain
• 30 Watts Peak Output Power
• Internal Tracking FETs
(for improved bias control)
• WCDMA Performance
5 Watts Average Output Level
18% Power Added Efficiency
–45 dBc ACPR
Gate 1
RF IN ^Lead
Module Schematic Diagram
Module Substrate
Q1 Die Carrier
Q1
Input
Match
Output
Match
Q2 Die Carrier
Q2
Input
Match
Output
Match
Drain 2
RF OUT
Lead
S2
S1
Sense S1 Lead
Gate 2 Lead
Sense S2 Lead
D1
Lead
Note: Additionally, there are 250K Ohm resistors connected in shunt with all leads, to enhance ESD protection.
Page 1 of 13 Specifications subject to change without notice. US Patent No.6,822,321
http://www.cree.com/
Rev. 3