PDM31564 Datasheet, PDF (1/9 Pages) List of Unclassifed Manufacturers – 256 X 16 CMOS 3.3V STATIC RAM

Features
n High-speed access times
- Com’l: 8, 10, 12, 15, and 20 ns
- Ind: 12, 15, and 20 ns
n Low power operation (typical)
- PDM31564SA
Active: 300 mW
Standby: 25mW
n High-density 256K x 16 architecture
n 3.3V (±0.3V) power supply
n Fully static operation
n TTL-compatible inputs and outputs
n Output buffer controls: OE
n Data byte controls: LB, UB
n Packages:
Plastic SOJ (400 mil) - SO
Plastic TSOP (II) - T
PRELIMINARY
PDM_PD3_M1₃5₁6₅₆4₄
Description
256K x 16 CMOS
3.3V Static RAM
1
The PDM31564 is a high-performance CMOS static
2 ^{RAM organized as 262,144 x 16 bits. The PDM31564}
features low power dissipation using chip enable
(CE) and has an output enable input (OE) for fast
memory access. Byte access is supported by upper
3 ^{and lower byte controls.}
The PDM31564 operates from a single 3.3V power
supply and all inputs and outputs are fully TTL-
compatible.
4 ^{The PDM31564 is available in a 44-pin 400-mil plas-}
tic SOJ and a plastic TSOP package for high-density
surface assembly and is suitable for use in high-
speed applications requiring high-speed storage.
5
6
Functional Block Diagram
A8_A7- _-A_A0₀
Memory
Cell
Array
255162xx122586 xx 32
I/O15-I/O0
Data
Input/
Output
Buffer
WE
OE
UB ^Control
LB
Logic
CE
Clock
Generator
Sense Amp
Column
Decoder
Column
Address
Buffer
Rev. 1.2 - 3/31/98
A_A1₁7_5-A- ₈A9
7
Vcc
Vss
8
9
10
11
12
1