P6503NJ Datasheet, PDF (1/8 Pages) List of Unclassifed Manufacturers – N&P-Channel Enhancement Mode Field Effect Transistor

NIKO-SEM
N- & P-Channel Enhancement Mode
Field Effect Transistor
PRODUCT SUMMARY
V_(BR)DSS R_DS(ON)
I_D
N-Channel 30 65m
4A
P-Channel -30 150m
-3A
P6503NJ
TSOPJW-8
G : GATE
D : DRAIN
S : SOURCE
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current¹
T_C = 25 °C
T_C = 70 °C
Power Dissipation
T_C = 25 °C
T_C = 70 °C
Junction & Storage Temperature Range
Lead Temperature (¹/₁₆” from case for 10 sec.)
V_DS
V_GS
I_D
I_DM
P_D
T_j, T_stg
T_L
N-Channel P-Channel UNITS
30
-30
V
±20
±20
V
4
-3
3
-2
A
10
-10
2
W
1.3
-55 to 150
°C
275
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
R_θJA
1_{Pulse width limited by maximum junction temperature.}
2_{Duty cycle ≤ 1%}
TYPICAL
MAXIMUM
110
UNITS
°C / W
1
JUL-08-2004