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P01N02LJA Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – N-Channel Logic Level Enhancement Mode Field Effect Transistor(Preliminary)
NIKO-SEM
N-Channel Logic Level Enhancement Mode
Field Effect Transistor
( Preliminary)
P01N02LJA
J-LEAD8
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
25V
70mΩ
ID
1.2A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
Lead Temperature (1/16” from case for 10 sec.)
VGS
ID
IDM
PD
Tj, Tstg
TL
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RθJC
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
TYPICAL
4 :GATE
5,6,7,8 :DRAIN
1,2,3 :SOURCE
LIMITS
±15
1.2
1.0
12
0.6
0.5
-55 to 150
275
UNITS
V
A
W
°C
MAXIMUM
65
230
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current1
ID(ON)
Drain-Source On-State Resistance1 RDS(ON)
Forward Transconductance1
gfs
STATIC
VGS = 0V, ID = 250 µA
VDS = VGS, ID = 250 µA
VDS = 0V, VGS = ±15V
VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 125 °C
VDS = 10V, VGS = 10V
VGS = 7V, ID = 1.2A
VGS = 10V, ID = 1.2A
VDS = 20V, ID = 1.2A
LIMITS
UNIT
MIN TYP MAX
25
V
0.7 1.0 2.5
±250 nA
25
µA
250
1.2
A
120 180
mΩ
70 120
16
S
1
AUG-30-2002